![]() Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from EP08105356 external-priority Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd Priority to US14/668,227 priority Critical patent/US9793408B2/en Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee Taiwan Semiconductor Manufacturing Co TSMC Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Taiwan Semiconductor Manufacturing Co TSMC Ltd Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ![]() ( en Inventor Gerben Doornbos Robert James Pascoe Lander Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US14/668,227 Other versions US20150200302A1 Google Patents Fin field effect transistor (FinFET)Äownload PDF Info Publication number US9793408B2 US9793408B2 US14/668,227 US201514668227A US9793408B2 US 9793408 B2 US9793408 B2 US 9793408B2 US 201514668227 A US201514668227 A US 201514668227A US 9793408 B2 US9793408 B2 US 9793408B2 Authority US United States Prior art keywords fin dielectric material layer finfet trench isolation Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US9793408B2 - Fin field effect transistor (FinFET) US9793408B2 - Fin field effect transistor (FinFET)
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